The Fudan team reports a 94.34% yield from full-chip testing — a figure that rivals commercial silicon production — and operational speeds up to five megahertz. Each bit consumes just 0.644 picojoules, far below the energy draw of today’s silicon flash cells. The memory demonstrated fast 20-nanosecond programming and erasing, ten-year data retention, and endurance of over 100,000 write cycles.

Pretty slick specs even if this is an early proof of concept.